Integrated test concepts for in-situ millimeter-wave device characterization

This paper presents our recent work towards state-of-the-art integrated test concepts for the in-situ characterization of silicon-integrated millimeter-wave devices and transceiver components for radar and communication applications.

Narrowband as well as ultra-broadband integrated network analysis solutions for a variety of frequency bands ranging from 50 to 120 GHz are outlined. In this context, direct-conversion and heterodyne architectures and their respective implementations in silicon-germanium technologies are discussed.

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